PMPB16R5XNE中文资料安世数据手册PDF规格书

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Low threshold voltage

• Very fast switching

• Trench MOSFET technology

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

• ElectroStatic Discharge (ESD) protection > 800 V HBM (class H1B)

3. Applications

• Battery management

• High-speed line driver

• Low-side load switch

• Switching circuits