丝印：ZG；Package：SOT1220-2；30 V, P-channel Trench MOSFET

1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Trench MOSFET technology • Small

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NEXPERIA

安世

30 V, P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Logic-level compatible\n• Trench MOSFET technology\n• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm\n• Exposed drain pad for excellent thermal conduction;

Nexperia

安世

DFN

恩XP

上传：深圳市中远芯科技有限公司

DFN2020

NEXPERIA/安世

上传：深圳市盈慧通电子有限公司

2512

ROHM/罗姆

上传：佛山市芯光达科技有限公司