N-channel mTrenchMOS™ ultra low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Low on-state resistance n Low threshold voltage. n Driver circuits n Switching in

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

N-channel UTrenchMOS ultra low level FET

文件：90.1 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

Dual N-channel mTrenchMOS ultra low level FET

文件：94.02 Kbytes 页数：12 Pages

PHI

飞利浦

Dual N-channel mTrenchMOS™ ultra low level FET

1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Dual device n Fast switching n Low on-state resistance n Low threshold voltag

文件：212.17 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

20V/-12V N-Channel P-Channel Enhancement Mode MOSFET

Application © Notebook © Load Switch © Networking © Hand-held Instruments

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TECHPUBLIC

台舟电子