N-channel mTrenchMOS™ ultra low level FET

1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Low on-state resistance n Low threshold voltage. n Driver circuits n Switching in

文件：208.39 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel UTrenchMOS ultra low level FET

文件：90.1 Kbytes 页数：12 Pages

PHI

PHI

N-channel TrenchMOS ultra low level FET

Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Nexperia

安世

Dual N-channel mTrenchMOS ultra low level FET

文件：94.02 Kbytes 页数：12 Pages

PHI

PHI

Dual N-channel mTrenchMOS™ ultra low level FET

1.1 Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features 1.3 Applications n Surface mounted package n Footprint 40 smaller than SOT23 n Dual device n Fast switching n Low on-state resistance n Low threshold voltag

文件：212.17 Kbytes 页数：13 Pages

NEXPERIA

安世

20V/-12V N-Channel P-Channel Enhancement Mode MOSFET

Application © Notebook © Load Switch © Networking © Hand-held Instruments

文件：1.64002 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子