包装：散装 类别：盒子，外壳，机架 盒配件 描述：BOX TO STUD SUPPORT FOR 1/4 DRYW

PANDUIT

包装：散装 类别：盒子，外壳，机架 盒配件 描述：BOX TO STUD SUPPORT FOR 1/4 DRYW

PANDUIT

丝印：AZ；Package：SOT323；30 V, 0.9 A N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Appl

文件：1.16211 Mbytes 页数：16 Pages

NEXPERIA

安世

30 V, 0.9 A N-channel Trench MOSFET

文件：889.57 Kbytes 页数：15 Pages

PHI

PHI

丝印：ZW；Package：SC-70；30V N-channel Trench MOSFET

文件：720.55 Kbytes 页数：15 Pages

NEXPERIA

安世

30V N-channel Trench MOSFET

N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. • Low threshold voltage\n• Very fast switching\n• Trench MOSFET technology\n• ElectroStatic Discharge (ESD) protection > 2 kV HBM;

Nexperia

安世

PMF250XNEA - 30 V, N-channel Trench MOSFET

30 V, N-channel Trench MOSFET - N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. ·Low threshold voltage\n·Very fast switching\n·Trench MOSFET technology\n·ElectroStatic Discharge (ESD) protection > 2 kV HBM\n·AEC-Q101 qualified;

Nexperia

安世

30 V, 0.9 A N-channel Trench MOSFET

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