PMEG6020ETR-Q

High temperature 60 V, 2 A low VF Schottky barrier rectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤

PMEG6020ETR-QX

包装：卷带（TR） 封装/外壳：SOD-123W 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 2A SOD123W

PS6020

20-outletVerticalPowerStripwith15-ft.Cord

PS6020

20-OutletVerticalPowerStrip,120V,15A,15ft.(4.57m)Cord,5-15P,60in.

Features -Sturdyall-metal60inchcordedstripformatwith2.795inchcenter-to-centeroutletspacing -Includedmountinghardware -Includes20NEMA5-15Routputreceptacles -Idealforhorizontalorverticalracewaystylepowerdistributioninoffice,workbench,industrial, networkingand

QM6020AP

N-ChannelMOSFETusesadvancedtrenchtechnology

R6020ANJ

10VDriveNchMOSFET

10VDriveNchMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Switching Structure SiliconN-channelMOSFET

R6020ANX

Nch600V20APowerMOSFET

R6020ANX

10VDriveNchMOSFET

Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. 6)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

R6020ANZ

10VDriveNchMOSFET

•Features 1)Lowon-resistance. 2)Lowinputcapacitance. 3)HighESD. •Application Switching •Structure SiliconN-channelMOSFET

R6020ENJ

Nch600V20APowerMOSFET

R6020ENJ

iscN-ChannelMOSFETTransistor

R6020ENX

Nch600V20APowerMOSFET

R6020ENX

iscN-ChannelMOSFETTransistor

R6020ENZ

Nch600V20APowerMOSFET

R6020ENZ

iscN-ChannelMOSFETTransistor

R6020FNJ

Nch600V20APowerMOSFET

R6020FNX

10VDriveNchMOSFET

Features 1)Fastreverserecoverytime(trr). 2)Lowon-resistance. 3)Fastswitchingspeed. 4)Gate-sourcevoltage(VGSS)guaranteedtobe30V. 5)Drivecircuitscanbesimple. 6)Paralleluseiseasy. 7)Pb-freeleadplating;RoHScompliant Application SwitchingPowerSupply

R6020JNJ

Nch600V20APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications

R6020JNX

Nch600V20APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications

R6020JNZ

Nch600V20APowerMOSFET

Features 1)Fastreverserecoverytime(trr) 2)Lowon-resistance 3)Fastswitchingspeed 4)Drivecircuitscanbesimple 5)Pb-freeplating;RoHScompliant Application Switchingapplications