PMEG6020ETP-QX

Package：SOD-128；包装：带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 60V 2A SOD128

Nexperia USA Inc.

PMEG6020ETR

Hightemperature60V,2AlowVFSchottkybarrierrectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤

PMEG6020ETR-Q

Hightemperature60V,2AlowVFSchottkybarrierrectifier

1.Generaldescription PlanarSchottkybarrierrectifierwithanintegratedguardringforstressprotection,encapsulatedin aSOD123WsmallandflatleadSurface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Averageforwardcurrent:IF(AV)≤2A •Reversevoltage:VR≤

PS6020

20-outletVerticalPowerStripwith15-ft.Cord

PS6020

20-OutletVerticalPowerStrip,120V,15A,15ft.(4.57m)Cord,5-15P,60in.

Features -Sturdyall-metal60inchcordedstripformatwith2.795inchcenter-to-centeroutletspacing -Includedmountinghardware -Includes20NEMA5-15Routputreceptacles -Idealforhorizontalorverticalracewaystylepowerdistributioninoffice,workbench,industrial, networkingand

QM6020AP

N-ChannelMOSFETusesadvancedtrenchtechnology

QND-6020R

2MH.265IRDomeCamera

•Max.2M(1920x1080)resolution •Built-in2.8mm3.6mmfixedlens •Max.30fps@allresolutions(H.265/H.264) •H.265,H.264,MJPEGcodecsupported,Multiplestreaming •Motiondetection,Tampering,Defocusdetection •microSD(128GB)memoryslot,PoE/12VDC •IRviewablelength20m,IK0

QNO-6020R

2MH.265IRBulletCamera

•Max.2M(1920x1080)resolution •Built-in3.6mmfixedlens •Max.30fps@allresolutions(H.265/H.264) •H.265,H.264,MJPEGcodecsupported,Multiplestreaming •Motiondetection,Tampering,Defocusdetection •microSD(128GB)memoryslot,PoE/12VDC

QNV-6020R

2MH.265IRDomeCamera

•Max.2M(1920x1080)resolution •Built-in3.6mmfixedlens •Max.30fps@allresolutions(H.265/H.264) •H.265,H.264,MJPEGcodecsupported,Multiplestreaming •Motiondetection,Tampering,Defocusdetection •microSD(128GB)memoryslot,PoE/12VDC •IRviewablelength25m •Hallway

R6020ANJ

10VDriveNchMOSFET

10VDriveNchMOSFET Features 1)Lowon-resistance. 2)Fastswitchingspeed. 3)Gate-sourcevoltage(VGSS)guaranteedtobe±30V. 4)Drivecircuitscanbesimple. 5)Paralleluseiseasy. Applications Switching Structure SiliconN-channelMOSFET