丝印：C1；Package：CFP3；High temperature 40 V, 2 A low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Average forward current: IF(AV) ≤ 2 A • Reverse voltage: VR ≤

文件：255.26 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 2 A low VF MEGA Schottky barrier rectifier

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. • Average forward current: IF(AV) ≤ 2 A\n• Reverse voltage: VR ≤ 40 V\n• Low forward voltage\n• High power capability due to clip-bonding technology\n• Small and flat lead SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications\n• High temperature Tj;

Nexperia

安世

Package：SOD-123W；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 40V 2A SOD123W

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

NPN transistor/Schottky-diode module

文件：89.45 Kbytes 页数：11 Pages

PHI

飞利浦