丝印：9A；Package：DFN1006BD-2；30 V, 0.5 A very low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SOD882BD (DFN1006BD-2) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.5 A • Reverse voltage: VR ≤ 30

文件：202.07 Kbytes 页数：9 Pages

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丝印：9A；Package：DFN1006BD-2；30 V, 0.5 A very low VF Schottky barrier rectifier

1. General description Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SOD882BD (DFN1006BD-2) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.5 A • Reverse voltage: VR ≤ 30

文件：202.23 Kbytes 页数：9 Pages

NEXPERIA

安世

30 V, 0.5 A very low VF Schottky barrier rectifier

Planar Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in an ultra small SOD882BD (DFN1006BD-2) Surface-Mounted Device (SMD) plastic package. • Forward current: IF ≤ 0.5 A\n• Reverse voltage: VR ≤ 30 V\n• Ultra small SMD plastic package\n• Very low forward voltage\n• Suitable for Automatic Optical Inspection (AOI) of solder joint\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

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30 V, 0.5 A low VF MEGA Schottky barrier rectifier

文件：214.51 Kbytes 页数：13 Pages

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Low VCEsat (BISS) transistors

文件：948.33 Kbytes 页数：12 Pages

PHI

PHI