丝印：F5；Package：SOT666；20 V, 1.5 A low VF Schottky barrier diode

1. General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: 1.5 A • Reverse voltage: 20 V • Very low forward voltage

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安世安世半导体(中国)有限公司

Low VF MEGA Schottky barrier diode

文件：112.82 Kbytes 页数：7 Pages

恩XP

Low VF MEGA Schottky barrier diode

文件：112.82 Kbytes 页数：7 Pages

PHI

飞利浦

Low VF MEGA Schottky barrier diode

Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package. • Forward current: 1.5 A\n• Reverse voltage: 20 V\n• Very low forward voltage\n• Ultra small plastic SMD package\n• Flat leads: excellent coplanarity and improved thermal behaviour.\n• AEC-Q101 qualified;

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安世

Package：SOT-563，SOT-666；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE SCHOTTKY 20V 1.5A SOT666

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司