丝印：060T；Package：CFP15B；60 V, 2 x 4 A dual common cathode low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) dual Schottky barrier rectifier in common cathode configuration encapsulated in a CFP15B (SOT1289B) power and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage: VR ≤

文件：268.27 Kbytes 页数：14 Pages

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安世安世半导体(中国)有限公司

60 V, 2 x 4 A dual common cathode low leakage current Trench MEGA Schottky barrier rectifier

Trench Maximum Efficiency General Application (MEGA) dual Schottky barrier rectifier in common cathode configuration encapsulated in a CFP15B (SOT1289B) power and flat lead Surface-Mounted Device (SMD) plastic package. • Reverse voltage: VR ≤ 60 V\n• Forward current: IF ≤ 4 A (per diode)\n• Low forward voltage\n• Low leakage current due to Trench MEGA Schottky technology\n• Power and flat lead SMD plastic package\n• Package height typical 0.95 mm\n• High power capability due to clip-bond technology\n• Qualified ac;

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Package：TO-277，3-PowerDFN；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 二极管 - 整流器 - 阵列 描述：SCHOTTKYS IN CFP PACKAGES

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Discrete and MOSFET components, analog & logic ICs

文件：11.62183 Mbytes 页数：234 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

60 V, 2 x 4 A dual common cathode low leakage current Trench MEGA Schottky barrier rectifier

1. General description Trench Maximum Efficiency General Application (MEGA) dual Schottky barrier rectifier in common cathode configuration encapsulated in a CFP15B (SOT1289B) power and flat lead Surface- Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage: VR ≤

文件：265.89 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司