PMCM650CUNE中文资料20 V, Common Drain N-channel Trench MOSFET数据手册Nexperia规格书

描述 Description

N-channel enhancement mode common-drain dual Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

特性 Features

• Common-drain type for bi-directional current flow
• Low threshold voltage
• Ultra small package: 0.98 × 1.48 × 0.35 mm
• Trench MOSFET technology
• ElectroStatic Discharge (ESD) protection > 2 kV HBM

应用 Application

• Loadswitch
• Battery Protection
• Battery Management