PNP Darlington transistor

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complement: PMBTA14. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High input impedance preamplifiers.

文件：43.57 Kbytes 页数：8 Pages

PHI

飞利浦

PNP Darlington transistor

DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complement: PMBTA14. FEATURES • High current (max. 500 mA) • Low voltage (max. 30 V) • High DC current gain (min. 10000). APPLICATIONS • High input impedance preamplifiers.

文件：107.59 Kbytes 页数：6 Pages

恩XP

丝印：2V；Package：SOT23；PNP Darlington transistor

FEATURES •High current (max. 500 mA) •Low voltage (max. 30 V) •High DC current gain (min. 10000). APPLICATIONS •High input impedance preamplifiers. DESCRIPTION PNP Darlington transistor in a SOT23 plastic package. NPN complement: PMBTA14.

文件：283.45 Kbytes 页数：7 Pages

NEXPERIA

安世

PNP Darlington transistor

PNP Darlington transistor in a SOT23 plastic package.\n NPN complement: PMBTA14. • High current (max. 500 mA)\n• Low voltage (max. 30 V)\n• High DC current gain (min. 10000).\n• AEC-Q101 qualified;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 30V 0.5A TO236AB

Nexperia USA Inc.