PM880 Panametrics Portable Hygrometer

Applications This rugged, intrinsically safe, portable hygrometer measures moisture in gases and non-aqueous liquids. It is used in conjunction with Moisture Image® Series (MIS), TF and M Series moisture probes for applications including: • Natural gas • Chemical and petrochemical gases

文件：248.26 Kbytes 页数：4 Pages

GEC

通用电气

PWM peak current mode controller for PoE and telecom systems

Features  PWM peak current mode controller  Input operating voltage up to 75 V  Internal high-voltage start up regulator with 20 mA current capability  Current sense with programmable blanking time up to 200 ns  Programmable fixed frequency up to 1 MHz  Soft-start up with settable ti

文件：818.15 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

PWM peak current mode controller for PoE and telecom systems

Features  PWM peak current mode controller  Input operating voltage up to 75 V  Internal high-voltage start up regulator with 20 mA current capability  Current sense with programmable blanking time up to 200 ns  Programmable fixed frequency up to 1 MHz  Soft-start up with settable ti

文件：818.15 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体

IEEE 802.3bt PoE-PD interface with embedded dual active bridge

Features  Dual active bridge, hot swap MOSFETand PoE-PD interface in a system-in-package  100 V N-ch MOSFETs with 0.2 Ω total path resistance for each active bridge.  100 V, 0.1 Ω high-side N-ch hot swap MOSFET  PoE-PD single-signature interface compliant with IEEE 802.3bt / at / af 

文件：1.64653 Mbytes 页数：45 Pages

STMICROELECTRONICS

意法半导体

IEEE 802.3bt PoE-PD interface with embedded dual active bridge

Features  Dual active bridge, hot swap MOSFETand PoE-PD interface in a system-in-package  100 V N-ch MOSFETs with 0.2 Ω total path resistance for each active bridge.  100 V, 0.1 Ω high-side N-ch hot swap MOSFET  PoE-PD single-signature interface compliant with IEEE 802.3bt / at / af 

文件：1.7232 Mbytes 页数：48 Pages

STMICROELECTRONICS

意法半导体

IEEE 802.3bt PoE-PD interface with embedded dual active bridge

Features  Dual active bridge, hot swap MOSFETand PoE-PD interface in a system-in-package  100 V N-ch MOSFETs with 0.2 Ω total path resistance for each active bridge.  100 V, 0.1 Ω high-side N-ch hot swap MOSFET  PoE-PD single-signature interface compliant with IEEE 802.3bt / at / af 

文件：1.64653 Mbytes 页数：45 Pages

STMICROELECTRONICS

意法半导体

IEEE 802.3bt PoE-PD interface with embedded dual active bridge

Features  Dual active bridge, hot swap MOSFETand PoE-PD interface in a system-in-package  100 V N-ch MOSFETs with 0.2 Ω total path resistance for each active bridge.  100 V, 0.1 Ω high-side N-ch hot swap MOSFET  PoE-PD single-signature interface compliant with IEEE 802.3bt / at / af 

文件：1.64653 Mbytes 页数：45 Pages

STMICROELECTRONICS

意法半导体

4 A dual low-side MOSFET driver

Features  Dual independent low-side MOSFET driver with 4 A sink and source capability  Independent enable for each driver  Driver output parallelability to support higher driving capability  Matched propagation delays  CMOS/TTL-compatible input levels  Wide input supply voltage range

文件：695.87 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

4 A dual low-side MOSFET driver

Features  Dual independent low-side MOSFET driver with 4 A sink and source capability  Independent enable for each driver  Driver output parallelability to support higher driving capability  Matched propagation delays  CMOS/TTL-compatible input levels  Wide input supply voltage range

文件：695.87 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

4 A dual low-side MOSFET driver

Features  Dual independent low-side MOSFET driver with 4 A sink and source capability  Independent enable for each driver  Driver output parallelability to support higher driving capability  Matched propagation delays  CMOS/TTL-compatible input levels  Wide input supply voltage range

文件：695.87 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体