PM200CSD060中文资料三菱电机数据手册PDF规格书

FEATURE

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process. For example, typical VCE(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

c) Keeping the package compatibility.

The layout/position of both terminal pin and mounting hole is same as S-series 3rd generation IPM.

• 3φ 200A, 600V Current-sense IGBT for 15kHz switching

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-Fo available from upper leg devices)

• Acoustic noise-less 22kW class inverter application

• UL Recognized Yellow Card No.E80276(N)

APPLICATION

General purpose inverter, servo drives and other motor controls