PM200CBS060中文资料三菱电机数据手册PDF规格书

FEATURE

a) Adopting 4th generation IGBT chip, which performance is improved by 1µm fine rule process. For example, typical Vce(sat)=1.7V

b) Using new Diode which is designed to get soft reverse recovery characteristics.

c) Over-temperature protection by detecting Tj of the IGBT chips

• 3φ 200A, 600V Current-sense IGBT type inverter

• Monolithic gate drive & protection logic

• Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage

• Acoustic noise-less 18.5/22kW class inverter application

APPLICATION

Servo drives and other motor controls