T1/E1/CEPT/ISDN-PRI DUAL PORT ISOLATION TRANSFORMER MODULES

文件：56.16 Kbytes 页数：2 Pages

PMI

T1/E1/CEPT/ISDN-PRI DUAL PORT ISOLATION TRANSFORMER MODULES

文件：56.16 Kbytes 页数：2 Pages

PMI

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)

Portable Equipment Applications Motor Drive Applications • Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.) (VGS=−10V) N Channel RDS (ON) = 38 mΩ(typ.)（VGS=10V) • High forward transfer admittance : P Channel |Yfs| = 7.3

文件：293.12 Kbytes 页数：11 Pages

TOSHIBA

东芝

Silicon P,N Channel MOSFET

■ Features ● Low drain-source ON-resistance: P Channel RDS(ON) = 38m¡ (typ.)(VGS=-10V) N Channel RDS(ON) = 38mȍ(typ.)(VGS=10V) ● High forward transfer admittance: P Channel |Yfs| = 7.3S (typ.) N Channel |Yfs| = 8S (typ.) ● Low leakage current: P Channel IDSS = -10ȝA(max)(VDS

文件：258.73 Kbytes 页数：10 Pages

KEXIN

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