MJH16006A

POWERTRANSISTORS8AMPERES500VOLTS150WATTS

NPNSiliconPowerTransistor 1kVSWITCHMODESeries Thesetransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedswitchmodeapplications. Features: •Collector–EmitterV

MJH16006A

POWERTRANSISTORS

NPNSiliconPowerTransistor 1kVSWITCHMODE™Series Thesetransistorsaredesignedforhigh–voltage,high–speed,powerswitchingininductivecircuitswherefalltimeiscritical.Theyareparticularlysuitedforline–operatedSWITCHMODEapplications. Features: •Collector–Emitter

MRF16006

TheRFLineNPNSiliconPowerTransistor

MRF16006

TheRFLineNPNSiliconPowerTransistor6.0W,1.6GHz,28V

Designedfor28Vmicrowavelarge–signal,commonbase,ClassC,CWamplifierapplicationsintherange1600–1640MHz •Specified28V,1.6GHzClassCcharacteristics Outputpower=6W Minimumgain=7.4dB,@6W Minimumefficiency=40@6W •Characterizedwithseriesequiva

MRF16006

RFPOWERTRANSISTORNPNSILICON

TheRFLineNPNSiliconRFPowerTransistor Designedfor28Voltmicrowavelarge–signal,commonbase,Class–CCWamplifierapplicationsintherange1600–1640MHz. •Specified28Volt,1.6GHzClass–CCharacteristics OutputPower=6Watts MinimumGain=7.4dB,@6Watts Minimu

MRF16006

RFPOWERTRANSISTORNPNSILICON

TheRFLineNPNSiliconRFPowerTransistor Designedfor28Voltmicrowavelarge–signal,commonbase,Class–CCWamplifierapplicationsintherange1600–1640MHz. •Specified28Volt,1.6GHzClass–CCharacteristics OutputPower=6Watts MinimumGain=7.4dB,@6Watts Minimu

NTE16006

SiliconNPNTransistorLowFrequencyOutputAmpw/HighCurrentGain

Features: •HighDCCurrentGain •LowCollector–EmitterSaturationVoltage •AnMtypemoldpackagethatallowseasymanualandautomaticinsertion.CanbefirmlymountedflushtoPCBsurface

NTE16006-ECG

PolymericPositiveTemperatureCoefficient

RESETTABLECIRCUITPROTECTION WhenitcomestoPolymericPositiveTemperatureCoefficient(PPTC)circuitprotection,younowhaveachoice. Polymericfusesaremadefromaconductiveplasticformedintothinsheets,withelectrodesattachedtoeitherside.Theconductiveplasticismanufactu