光电附件

Khatod

包装：散装 类别：光电器件 光学 - 镜头 描述：LENS WHITE 111DEG SPOT SCREW

Khatod North America LLC

MOS FIELD EFFECT TRANSISTOR

FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A) • Low Ciss : Ciss = 1100 pF (TYP.) • Built-in G-S protection diode • Small and surface mount pac

文件：225.6 Kbytes 页数：10 Pages

RENESAS

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application. FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (V

文件：58.39 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

FEATURES • Dual MOS FET chips in small package • 2.5 V gate drive type low on-state resistance RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A) RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A) • Low Ciss : Ciss = 1100 pF (TYP.) • Built-in G-S protection diode • Small and surface mount pac

文件：225.6 Kbytes 页数：10 Pages

RENESAS

瑞萨