PL-27N25PSQ

Sales Outline Drawing

27N25

250VN-ChannelMOSFET

ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighavalancheenerg

FQA27N25

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •27A,250V,RDS(on)=0.11Ω@VGS=10V •Lowgatecharge(typical50nC) •LowCrss(typical45pF) •Fastswitchi

FQAF27N25

250VN-CHANNELMOSFET

FQB27N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=25.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.11Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FQB27N25

250VN-ChannelMOSFET

FQI27N25

250VN-ChannelMOSFET

FQI27N25TU

250VN-ChannelMOSFET

Features ■TyprDS(on)=108mΩatVGS=10V,ID=25.5A ■TypQg(tot)=45nCatVGS=10V,ID=27A ■UISCapability ■RoHSCompliant ■QualifiedtoAECQ101 Applications ■AutomotiveEngineControl ■PowertrainManagement ■SolenoidandMotorDrivers ■ElectronicSteering ■Integrated

FQP27N25

250VN-ChannelMOSFET

ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighavalancheenerg

FQPF27N25

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.11Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.