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零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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N-Channel30V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
20VN-ChannelEnhancementModeMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
2.8Amps,20Volts,N-ChannelSOT-23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry. Features •LowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •MiniatureSOT–23SurfaceMountPac | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
2.8Amps,20Volts,N-ChannelSOT-23 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry. Features •LowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •MiniatureSOT–23SurfaceMountPac | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
2.8Amps,20Volts,N?묬hannelSOT??3 TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry. Features •LowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •MiniatureSOT–23SurfaceMountPac | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
PowerMOSFET2Amps,25VoltsN?묬hannelSO??,Dual | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
DUALTMOSMOSFET3.6AMPERES25VOLTS MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MEDIUMPOWERLOGICLEVELTMOSFET1.6AMP20VOLTS MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvolta | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola |
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