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2N02

N-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

LMTL2N02

20VN-ChannelEnhancementModeMOSFET

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

MGSF2N02E

2.8Amps,20Volts,N-ChannelSOT-23

TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry. Features •LowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •MiniatureSOT–23SurfaceMountPac

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGSF2N02EL

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGSF2N02EL

2.8Amps,20Volts,N-ChannelSOT-23

TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry. Features •LowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •MiniatureSOT–23SurfaceMountPac

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MGSF2N02EL

2.8Amps,20Volts,N?묬hannelSOT??3

TheseminiaturesurfacemountMOSFETslowRDS(on)assureminimalpowerlossandconserveenergy,makingthesedevicesidealforuseinspacesensitivepowermanagementcircuitry. Features •LowRDS(on)ProvidesHigherEfficiencyandExtendsBatteryLife •MiniatureSOT–23SurfaceMountPac

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDF2N02E

PowerMOSFET2Amps,25VoltsN?묬hannelSO??,Dual

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMDF2N02E

DUALTMOSMOSFET3.6AMPERES25VOLTS

MediumPowerSurfaceMountProducts TMOSDualN-ChannelFieldEffectTransistors MiniMOSdevicesareanadvancedseriesofpowerMOSFETswhichutilizeMotorola’sTMOSprocess.TheseminiaturesurfacemountMOSFETsfeatureultralowRDS(on)andtruelogiclevelperformance.Theyarecapableofwi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MMFT2N02EL

PowerMOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

MMFT2N02EL

MEDIUMPOWERLOGICLEVELTMOSFET1.6AMP20VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSMediumPowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvolta

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

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