60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：569.58 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：U40N06A；Package：TO-251AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：569.58 Kbytes 页数：8 Pages

PANJIT

強茂

中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

Panjit

強茂

N-Channel Enhancement Mode Power MOSFET

文件：470.84 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel Enhancement Mode Power MOSFET

文件：505.86 Kbytes 页数：4 Pages

SECOS

喜可士

N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.03 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■HIGH CURRENT CAPABILITY ■175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SOLENO

文件：354.52 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体