60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 页数：8 Pages

PANJIT

強茂

丝印：U35N06A；Package：TO-251AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：801.72 Kbytes 页数：8 Pages

PANJIT

強茂

中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

Panjit

強茂

60V N-Channel Power Mosfet

Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100 Single Pulse avalanche energy Test

文件：781.59 Kbytes 页数：8 Pages

UMW

友台半导体

60V N-Channel Power Mosfet

General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Swit

文件：733.36 Kbytes 页数：8 Pages

EVVOSEMI

翊欧

60V N-Channel Trench MOSFET

文件：812.36 Kbytes 页数：8 Pages

SEMIHOW