40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：721.59 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：4446；Package：DFN3333-8L；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：721.59 Kbytes 页数：6 Pages

PANJIT

強茂

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

Panjit

強茂

37.5 – 42.5 GHz 4 Watt GaN Power Amplifier

Key Features • Frequency Range: 37.5 – 42.5 GHz • PSAT (PIN = 22 dBm): 36 dBm • PAE (PIN = 22 dBm): 25 % • IM3 (POUT/Tone = 30 dBm): -25 dBc • Small Signal Gain: 18 dB • Bias: VD = 24 V, IDQ = 70 mA, VG = -2.3 V typ. range • Die Dimensions: 3.26 x 1.49 x 0.05 mm Applications • Satel

文件：1.82537 Mbytes 页数：31 Pages

QORVO

威讯联合

37.5 – 42.5 GHz 4 Watt GaN Power Amplifier

Key Features • Frequency Range: 37.5 – 42.5 GHz • PSAT (PIN = 22 dBm): 36 dBm • PAE (PIN = 22 dBm): 25 % • IM3 (POUT/Tone = 30 dBm): -25 dBc • Small Signal Gain: 18 dB • Bias: VD = 24 V, IDQ = 70 mA, VG = -2.3 V typ. range • Die Dimensions: 3.26 x 1.49 x 0.05 mm Applications • Satel

文件：1.82537 Mbytes 页数：31 Pages

QORVO

威讯联合

N-Channel 40-V (D-S) MOSFET

文件：265.41 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世