60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：519.84 Kbytes 页数：8 Pages

PANJIT

強茂

中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

Panjit

強茂

丝印：D70N06；Package：TO-220AB；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@20A

文件：519.84 Kbytes 页数：8 Pages

PANJIT

強茂

25A, 60V, 0.025 Ohm, N-Channel Power MOSFET

The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They are designed for use in applications such as switching

文件：78.17 Kbytes 页数：8 Pages

Intersil

70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：90.46 Kbytes 页数：6 Pages

Fairchild

仙童半导体

70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, s

文件：71.22 Kbytes 页数：8 Pages

Intersil