丝印：Q33；Package：SOT-23-3；P-Channel Enhancement Mode Power MOSFET

文件：1.53994 Mbytes 页数：7 Pages

PJSEMI

平晶半导体

P-Channel Enhancement Mode Power MOSFET

Pingjing

平晶微

ICs for Communications

Overview Functional Description, Benefits • New B6HF bipolar technology, 25GHz fT • Small outline P-TSSOP 16 package • Reduced external components • Frequency range up to 3.0GHz • Amplifier may be used as LNA or Driver • LNA mode • 1.7dB typ. noise figure at 1.8GHz • 5mA typ. curren

文件：1.13165 Mbytes 页数：69 Pages

SIEMENS

西门子

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合

GENERAL PURPOSE AMPLIFIER

Product Description The RF2333 is a general purpose, low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF amplifica

文件：84.83 Kbytes 页数：6 Pages

RFMD

威讯联合