首页 >PJM20N60PA>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
20A600VSingleN-ChannelPowerMOSFET | PFC PFC Device Inc. | PFC | ||
IGBT Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-CHANNELIGBT FEATURES Lowgatecharge TrenchFSTechnology, saturationvoltage:VCE(sat),typ=1.6V,IC=20AandTC=25°C APPLICATIONS Generalpurposeinverters UPS | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
IGBT Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
IGBT Features 600V,20A VCE(sat)(typ.)=1.85V@VGE=15V,IC=20A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UP | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-CHANNELIGBT APPLICATIONS Generalpurposeinverters UPS FEATURES Lowgatecharge TrenchFSTechnology, Saturationvoltage:VCE(sat),typ=1.85VIC=20AandTC=25°C | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | GWSEMI | ||
N-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON |
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