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PSM15N60CT

15A600VSingleN?륝hannelPowerMOSFET

PFC

PFC Device Inc.

RLBGB15N60

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

RLGB15N60CT

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS,

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

RLPGB15N60CT

IGBT

Features 600V,15A VCE(sat)(typ.)=1.75V@VGE=15V,IC=15A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms SquareRBSOA GeneralDescription trenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasIH(inductionheating),UPS, general

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

SGB15N60

FastIGBTinNPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SGB15N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SGB15N60HS

HighSpeedIGBTinNPT-technology

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SGF15N60RUFD

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

SGH15N60

ShortCircuitRatedIGBT

GeneralDescription FairchildsRUFseriesofInsulatedGateBipolarTransistors(IGBTs)providelowconductionandswitchinglossesaswellasshortcircuitruggedness.TheRUFseriesisdesignedforapplicationssuchasmotorcontrol,uninterruptedpowersupplies(UPS)andgeneralinverterswh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

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