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DESD5V0V1BCSP

LOWCAPACITANCEBIDIRECTIONALTVSDIODE

DIODESDiodes Incorporated

美台半导体

PESD5V0V1BA

VerylowcapacitancebidirectionalESDprotectiondiodes

1.1Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD5V0V1BA

VerylowcapacitancebidirectionalESDprotectiondiode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD5V0V1BA

Microprocessorbasedequipment

Features Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)17A(8/20μs) Applications Microprocessorbasedequipment PersonalDigit

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD5V0V1BA

BidirectionalESDprotectionofoneline

Features Applications BidirectionalESDprotectionofoneline ESDprotectionupto30kV Verylowdiodecapacitance:Cd=11pF IEC61000-4-2;level4(ESD) Max.peakpulsepower:PPP=45W IEC61000-4-5(surge);IPP=4.8A Lowclampingvoltage:VCL=12.5V AEC-Q101qualified Ultral

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD5V0V1BA-Q

VerylowcapacitancebidirectionalESDprotectiondiode

1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefit

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PESD5V0V1BA-TP

Bl-directionalTVSDiode

Features Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:5V Ultralowclampingvoltage Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV' Contactdischarge:+30kV —IEC61000-4-4(EFT)40A(5/50ns) RoHSCompliant

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

PESD5V0V1BB

BidirectionalESDprotectionofoneline

Features Applications BidirectionalESDprotectionofoneline ESDprotectionupto30kV Verylowdiodecapacitance:Cd=11pF IEC61000-4-2;level4(ESD) Max.peakpulsepower:PPP=45W IEC61000-4-5(surge);IPP=4.8A Lowclampingvoltage:VCL=12.5V AEC-Q101qualified Ultral

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD5V0V1BB

90Wattspeakpulsepower(tp=8/20μs)

Features Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent Applications Microprocessorbasedequipment PersonalDigitalAssistants(PDA’s) Notebooks,Desktops,andServers PortableInstrumentation PagersPeripherals 90Wattspeakpulsepower(tp=8/20μs) B

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

PESD5V0V1BB

VerylowcapacitancebidirectionalESDprotectiondiodes

1.1Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applications

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

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