首页 >PJE5V0V1DW-AU>规格书列表
零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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LOWCAPACITANCEBIDIRECTIONALTVSDIODE | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
VerylowcapacitancebidirectionalESDprotectiondiodes 1.1Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
VerylowcapacitancebidirectionalESDprotectiondiode 1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefits | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Microprocessorbasedequipment Features Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)17A(8/20μs) Applications Microprocessorbasedequipment PersonalDigit | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
BidirectionalESDprotectionofoneline Features Applications BidirectionalESDprotectionofoneline ESDprotectionupto30kV Verylowdiodecapacitance:Cd=11pF IEC61000-4-2;level4(ESD) Max.peakpulsepower:PPP=45W IEC61000-4-5(surge);IPP=4.8A Lowclampingvoltage:VCL=12.5V AEC-Q101qualified Ultral | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
VerylowcapacitancebidirectionalESDprotectiondiode 1.Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodeinaverysmall SOD323(SC-76)Surface-MountedDevice(SMD)plasticpackagedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 2.Featuresandbenefit | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
Bl-directionalTVSDiode Features Protectsonedataorpowerline Ultralowleakage:nAlevel Operatingvoltage:5V Ultralowclampingvoltage Complieswithfollowingstandards: ~IEC61000-4-2(ESD)immunitytest Airdischarge:+30kV' Contactdischarge:+30kV —IEC61000-4-4(EFT)40A(5/50ns) RoHSCompliant | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | TECHPUBLIC | ||
BidirectionalESDprotectionofoneline Features Applications BidirectionalESDprotectionofoneline ESDprotectionupto30kV Verylowdiodecapacitance:Cd=11pF IEC61000-4-2;level4(ESD) Max.peakpulsepower:PPP=45W IEC61000-4-5(surge);IPP=4.8A Lowclampingvoltage:VCL=12.5V AEC-Q101qualified Ultral | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
90Wattspeakpulsepower(tp=8/20μs) Features Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent Applications Microprocessorbasedequipment PersonalDigitalAssistants(PDA’s) Notebooks,Desktops,andServers PortableInstrumentation PagersPeripherals 90Wattspeakpulsepower(tp=8/20μs) B | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | UMW | ||
VerylowcapacitancebidirectionalESDprotectiondiodes 1.1Generaldescription VerylowcapacitancebidirectionalElectroStaticDischarge(ESD)protectiondiodesin smallSurface-MountedDevice(SMD)plasticpackagesdesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients. 1.2Featuresandbenefits 1.3Applications | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
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