PJD9N10A

100V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@4.5A

PJD9N10A

100V N-Channel MOSFET

PJD9N10A_L2_00001

Marking：D9N10A；Package：TO-252AA；100V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@4.5A

PJD9N10A_V01

100V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@4.5A

STD9N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10

N-CHANNEL100V-0.23ohm-9ADPAK/IPAKPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10L

N-CHANNEL100V-0.22ohm-9AIPAK/DPAKPOWERMOSTRANSISTOR

N-CHANNEL100V-0.22Ω-9AIPAK/DPAKPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.22Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■HIGHdV/dtRUGGEDNESS ■APPLICATIONORIENTEDCHARACTER

SW9N10V

N-channelEnhancedmodeTO-252MOSFET

T9N10E

N-Channel100V(D-S)MOSFET