PJD9N10A

100V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@4.5A

PJD9N10A

100V N-Channel MOSFET

PJD9N10A_L2_00001

Marking：D9N10A；Package：TO-252AA；100V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@4.5A

PJD9N10A_V01

100V N-Channel MOSFET

Features RDS(ON),VGS@10V,ID@4.5A

MTD9N10D

POWERMOSFET9AMPS,100VOLTS

MTD9N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=7A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.4Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p

MTD9N10E

POWERMOSFET9AMPS,100VOLTS

MTD9N10E

TMOSPOWERFET9.0AMPERES100VOLTSRDS(on)=0.25OHM

TMOSE-FETPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoveryt

STD9N10

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG

STD9N10

N-CHANNEL100V-0.23ohm-9ADPAK/IPAKPOWERMOSTRANSISTOR

FEATURESSUMMARY ■TYPICALRDS(on)=0.23Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEIPAK(TO-251)POWERPACKAG