60V N-Channel Enhancement Mode MOSFET

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中压MOSFET (60 - 200V , RDS(ON) < 1Ω)

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丝印：80N06SA；Package：TO-252AA；60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

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中压MOSFET(60 - 200V , Rds(on) < 1Ω)

PJD80N06SA-AU is a 60V N-Channel Enhancement Mode MOSFET, optimized to have excellent FOM and AEC-Q101 qualified with logic level gate drive. Specifically designed with an extremely efficient and reliable device for use in Automotive in a TO-252AA Package. The product features green molding compound ● RDS(ON), VGS@10V, ID@10ADS(ON), VGS@7V, ID@6A;

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