100V P-Channel Enhancement Mode MOSFET

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High Current Density Surface Mount TMBS짰 (Trench MOS Barrier Schottky) Rectifier Ultra Low

FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - A

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威世威世科技公司

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High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

文件：95.66 Kbytes 页数：5 Pages

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威世威世科技公司