650V N-Channel MOSFETs

Features - 650V,5A, RDS(ON) =900mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：1.01362 Mbytes 页数：5 Pages

POTENS

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700V N-Channel MOSFETs

Features - 700V,5A, RDS(ON) =1.6Ω @VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：1.08642 Mbytes 页数：6 Pages

POTENS

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25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V, IDS@30A=6mΩ • RDS(ON), VGS@4.5V, IDS@30A=9mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

文件：145.46 Kbytes 页数：4 Pages

PANJIT

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600V N-Channel MOSFETs

Features - 600V,6A, RDS(ON) =670mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：1.27055 Mbytes 页数：6 Pages

POTENS

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600V N-Channel MOSFETs

Features - 600V,8A, RDS(ON) =540mΩ @VGS = 10V - Improved dv/dt capability - Fast switching - Green Device Available - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：1.2675 Mbytes 页数：6 Pages

POTENS

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650V N-Channel MOSFETs

Features - 650V,8A, RDS(ON) =580mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - 100% EAS Guaranteed - Green Device Available - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：1.00941 Mbytes 页数：5 Pages

POTENS

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700V N-Channel MOSFETs

Features - 700V,8A, RDS(ON) =600mΩ@VGS = 10V - Improved dv/dt capability - Fast switching - PFC Power Supply Stages - DC-DC Converters - Adapter Applications - Motor Control

文件：1.26972 Mbytes 页数：6 Pages

POTENS

博盛半导体

25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

文件：142.69 Kbytes 页数：4 Pages

PANJIT

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40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：839.24 Kbytes 页数：6 Pages

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丝印：D100N04；Package：TO-252AA；40V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：839.24 Kbytes 页数：6 Pages

PANJIT

強茂