20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@4.5V, ID@5A

文件：488.97 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：56E；Package：SOT-23；20V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@4.5V, ID@5A

文件：488.97 Kbytes 页数：6 Pages

PANJIT

強茂

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

Panjit

強茂

CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：177.66 Kbytes 页数：9 Pages

MITSUMI

三美

IC for CMOS System Reset

Outline This IC is a system reset IC developed using the CMOS process. Super low consumption current of 0.25µA typ. has been achieved through use of the CMOS process. Also, detection voltage is high precision detection of ±2. Features 1. Super low consumption current 0.25µA typ. (when VDD

文件：89.77 Kbytes 页数：9 Pages

MITSUMI

三美

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen free According to IEC 61249-2-21    Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：74.41 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司