30V P-Channel Enhancement Mode MOSFET– ESD Protected

Features ● RDS(ON), VGS@-10V, ID@-2.6A

文件：513.49 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：09E；Package：SOT-23；30V P-Channel Enhancement Mode MOSFET– ESD Protected

Features ● RDS(ON), VGS@-10V, ID@-2.6A

文件：513.49 Kbytes 页数：6 Pages

PANJIT

強茂

低压MOSFET (20 - 40V , RDS(ON) < 1Ω)

Panjit

強茂

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：106.38 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel 30 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg Tested APPLICATIONS • For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter

文件：497.52 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：101.49 Kbytes 页数：7 Pages

SAMHOP

三合微科