Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：101.49 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

文件：471.24 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

Video Interface Palette True-Color CMOS RAMDAC

文件：245.3 Kbytes 页数：57 Pages

TI

德州仪器

Video Interface Palette True-Color CMOS RAMDAC

文件：256.23 Kbytes 页数：57 Pages

TI

德州仪器

P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC UT3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. FEATURES * SOT-23-3/SOT-23 RDS(ON) ≤ 130 mΩ @ VGS=-10V, ID=-2.6A RDS(ON) ≤ 200 mΩ @ VGS =-4.5V, ID=-2.0A

文件：202.76 Kbytes 页数：4 Pages

UTC

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