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PM1008

HighQChipInductors

BournsBourns Electronic Solutions

伯恩斯

PM-1008

SMALLOUTLINE10/100BASE-TISOLATIONTRANSFORMERS

PMI

Premier Magnetics, Inc.

PM1008S

ShieldedWirewoundChipInductors

BournsBourns Electronic Solutions

伯恩斯

QPA1008

2.7??3.8GHzVariableGainDriverAmplifier

TriQuint

TriQuint Semiconductor

QPD1008

125W,50V,DC–3.2GHz,GaNRFTransistor

ProductFeatures •Frequency:DCto3.2GHz •OutputPower(P3dB)1:162W •LinearGain1:17.5dB •TypicalDEFF3dB 1:74 •OperatingVoltage:50V •Lowthermalresistancepackage •CWandPulsecapable Note:1@2GHz

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

QPD1008L

125W,50V,DC??3.2GHz,GaNRFTransistor

ProductFeatures Frequency:DCto3.2GHz OutputPower(P3dB)1:162W LinearGain1:17.5dB TypicalDEFF3dB 1:74 OperatingVoltage:50V Lowthermalresistancepackage CWandPulsecapable Note:1@2GHz

QORVOQorvo, Inc

威讯联合威讯联合半导体(德州)有限公司

RBV1008

SILICONBRIDGERECTIFIERS

EIC

EIC discrete Semiconductors

RBV1008

SILICONBRIDGERECTIFIERS

PRV:50-1000Volts Io:10Amperes FEATURES: *Highcurrentcapability *Highsurgecurrentcapability *Highreliability *Lowreversecurrent *Lowforwardvoltagedrop *Highcasedielectricstrengthof2000VDC *Idealforprintedcircuitboard *Verygoodheatdissipation *Pb

SYNSEMI

SynSemi,Inc.

RBV1008

SILICONBRIDGERECTIFIERS

EIC

EIC discrete Semiconductors

RBV1008

SiliconBridgeRectifiers

VOLTAGERANGE:50---1000VCURRENT:10A Features ◇Ratingto1000VPRV ◇Surgeoverloadratingto300Amperespeak ◇Idealforprintedcircuitboard ◇Reliablelowcostconstructionutilizingmoldedplastictechniqueresultsininexpensiveproduct ◇LeadsolderableperMIL-STD-202meth

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

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