丝印：PHX；Package：DO-214AB；5.0 To 440V 3000W Surface Mount Transient Voltage Suppressors (TVS)

Features For surface mounted applications in order to optimize board space Low leakage Uni and Bidirectional unit Glass passivated junction Low inductance Excellent clamping capability Typical IR less than 5μA above 9V 3000W Peak power capability at 10 × 1000μs waveform Repetition rate (d

文件：4.23189 Mbytes 页数：8 Pages

UNSEMI

优恩半导体

丝印：PHX；Package：DO-214AB；Surface Mount Transient Voltage Suppressors (TVS)

文件：1.68763 Mbytes 页数：7 Pages

SOCAY

硕凯股份

丝印：PHXYY；Package：TDFN34-16；USB Port/AC Adapter Li-Ion/Polymer Battery Charger

Features • USB Port/AC Adapter System Power Charger ▪ USB: Programmable to 500mA for USB Hi/Lo ▪ Adapter: Programmable to 1.5A Max • 4.0V to 5.5V Input Voltage Range • Adapter Present Indicator (ADPP# Pin) • Adapter Presence Automatically Disables USB Charging • High Level of Integration Wi

文件：1.29571 Mbytes 页数：23 Pages

SKYWORKS

思佳讯

丝印：PHXYY；Package：TDFN44-16；USB Port/AC Adapter Li-Ion/Polymer Battery Charger

Features • USB Port/AC Adapter System Power Charger ▪ USB: Programmable to 500mA for USB Hi/Lo ▪ Adapter: Programmable to 1.5A Max • 4.0V to 5.5V Input Voltage Range • Adapter Present Indicator (ADPP# Pin) • Adapter Presence Automatically Disables USB Charging • High Level of Integration Wi

文件：1.29571 Mbytes 页数：23 Pages

SKYWORKS

思佳讯

丝印：PHXT；Package：DO-214AB；3000W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low induct0ance 3000W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature sol

文件：2.89053 Mbytes 页数：6 Pages

UNSEMI

优恩半导体

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX10N40E is supplied

文件：74.74 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=5.3A@ TC=25℃ · Drain Source Voltage -VDSS=400V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.55Ω(Max)@VGS= 10V DESCRIPTION · Off-line switched mode power supplies · Computer monitor power supplies

文件：279.78 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHX14NQ20T is supplie

文件：68.9 Kbytes 页数：9 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=7.6A@ TC=25℃ · Drain Source Voltage -VDSS=200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 230mΩ(Max)@VGS= 10V DESCRIPTION · DC to DC converters ·General purpose switching applications

文件：287.49 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor Isolated version of PHP20N06E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.

文件：57.87 Kbytes 页数：7 Pages

PHI

飞利浦