isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：317.47 Kbytes 页数：2 Pages

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N-channel TrenchMOS FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Fast switching n Low thermal resistance n DC-to-DC converters n Computer motherboard

文件：222.01 Kbytes 页数：14 Pages

NEXPERIA

安世

N-Channel 30-V (D-S) MOSFET

文件：959.98 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.5mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features 1.3 Applications n Fast switching n Low thermal resistance n DC-to-DC converters n Computer motherboard

文件：222.01 Kbytes 页数：14 Pages

NEXPERIA

安世