PHPT61010PY-Q中文资料安世数据手册PDF规格书

厂商型号	PHPT61010PY-Q
功能描述	100 V, 10 A PNP high power bipolar transistor
丝印标识	1010PAB
封装外壳	SOT669
文件大小	281.36 Kbytes
页面数量	14 页
生产厂商	Nexperia B.V. All rights reserved
企业简称	NEXPERIA【安世】
中文名称	安世半导体(中国)有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 15:32:00
人工找货	PHPT61010PY-Q价格和库存，欢迎联系客服免费人工找货

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power

plastic package.

NPN complement: PHPT61010NY-Q

2. Features and benefits

• High thermal power dissipation capability

• Suitable for high temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Power management

• Load switch

• Linear mode voltage regulator

• Backlighting applications

• Motor drive

• Relay replacement