100 V, 3A PNP high power bipolar transistor

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n PNP complement: PHPT61003PY • High thermal power dissipation capability\n• Suitable for high temperature applications up to 175 °C\n• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK\n• High energy efficiency due to less heat generation\n• AEC-Q101 qualified;

Nexperia

安世

丝印：1003PAB；Package：LFPAK56；100 V, 3A PNP high power bipolar transistor

文件：720.71 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

Package：SC-100，SOT-669；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 3A LFPAK56 PWRSO8

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

SI-61003-F

文件：591.94 Kbytes 页数：4 Pages

bel