丝印：0603PAB；Package：SOT669；60 V, 3 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60603NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

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60 V, 3 A PNP high power bipolar transistor

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.\n NPN complement: PHPT60603NY-Q

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60V, 3 A NPN high power bipolar transistor

文件：736.41 Kbytes 页数：15 Pages

NEXPERIA

安世

60 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60603PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：302.93 Kbytes 页数：14 Pages

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60 V, 3 A PNP high power bipolar transistor

文件：735.8 Kbytes 页数：15 Pages

NEXPERIA

安世