PHPT60603PY-Q中文资料安世数据手册PDF规格书

1. General description

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power

plastic package.

NPN complement: PHPT60603NY-Q

2. Features and benefits

• High thermal power dissipation capability

• Suitable for high temperature applications up to 175 °C

• Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK

• High energy efficiency due to less heat generation

• Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

• Power management

• Load switch

• Linear mode voltage regulator

• Backlighting applications