TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：57.28 Kbytes 页数：8 Pages

PHI

PHI

TrenchMOS transistor Standard level FET

恩XP

30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@16A

文件：425.93 Kbytes 页数：8 Pages

PANJIT

強茂

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS (ON). ● High power and current handling capability. ● TO-220 & T O-263 package.

文件：417.17 Kbytes 页数：5 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS (ON). ● High power and current handling capability. ● TO-220 & T O-263 package.

文件：417.17 Kbytes 页数：5 Pages

SAMHOP

三合微科