首页 >PHP54N06T其他被动元件>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=54A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=20mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSstandardlevelFET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-Channel60-V(D-S)MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET •Materialcategorization: | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-channelenhancementmodefield-effecttransistor Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™1technology. Productavailability: PHP54N06TinSOT78(TO-220AB). Features ■Lowon-stateresistance ■175°Crated. Applications ■DCtoDCconverters ■Switchedmodepowersuppl | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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