N-channel TrenchMOS??standard level FET

General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching ■ Low thermal resistance ■ Low gate charge. Applications ■ DC-to-DC primary side switching.

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PHI

飞利浦

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits H

文件：686.81 Kbytes 页数：13 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

文件：193.96 Kbytes 页数：13 Pages

恩XP

isc N-Channel MOSFET Transistor

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ISC

无锡固电

N-channel TrenchMOS standard level FET

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. • Higher operating power due to low thermal resistance\n• Low conduction losses due to low on-state resistance\n• Simple gate drive required due to low gate charge\n• Suitable for high frequency applications due to fast switching characteristics;

Nexperia

安世

N-channel TrenchMOS standard level FET

恩XP