PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：54.15 Kbytes 页数：7 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 18A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.34 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistor

恩XP

恩智浦

200V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@9A

文件：1.20857 Mbytes 页数：8 Pages

PANJIT

強茂

200V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@9A

文件：1.20857 Mbytes 页数：8 Pages

PANJIT

強茂

200V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@9A

文件：1.20857 Mbytes 页数：8 Pages

PANJIT

強茂