PHP18N20E

PowerMOS transistor

GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePowerSupplies

PHP18N20E

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=18A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.18Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

PJD18N20

200VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@9A

PJF18N20

200VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@9A

PJP18N20

200VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@9A

PJU18N20

200VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@9A

QM18N20D

N-Ch200VFastSwitchingMOSFETs

SSFP18N20

StarMOSTPowerMOSFET

STB18N20

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.145Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■VERYHIGHCURRENTCAPABILITY ■APPLICATIONORIENTEDCHARACTERIZATION ■THROUGH-HOLEI2PAK(TO-262)POWE

UT18N20

N-ChannelMOSFETusesadvancedtrenchtechnology