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PHB160NQ08T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHB160NQ08T

N-channelTrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptablepowersupplies ■DC-to-DCconverters ■Ge

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

PHP160NQ08T

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

PHP160NQ08T

N-channelTrenchMOSstandardlevelFET

Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptablepowersupplies ■DC-to-DCconverters ■Ge

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

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