首页 >PHP160NQ08T其他三极管>规格书列表
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iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptablepowersupplies ■DC-to-DCconverters ■Ge | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptablepowersupplies ■DC-to-DCconverters ■Ge | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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