首页 >PHP14NQ20T其他IC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticfullpackenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHX14NQ20Tissupplie | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TrenchMOSstandardlevelFET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=7.6A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=230mΩ(Max)@VGS=10V DESCRIPTION ·DCtoDCconverters ·Generalpurposeswitchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
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