首页 >PHP11N06T>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC-DCconvertersandgeneral | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
TrenchMOStransistorStandardlevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotection.ItisintendedforuseinDC | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT | ||
60VN-ChannelEnhancementModeMOSFET Features RDS(ON),VGS@10V,ID@6A | PANJITPan Jit International Inc. 強茂強茂股份有限公司 | PANJIT |
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