首页 >PHP101NQ03LTIC>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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TrenchMOS??logiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=14mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
TrenchMOS??logiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscN-ChannelMOSFETTransistor FEATURES DrainCurrent-ID=75A@TC=25℃ DrainSourceVoltage-VDSS=30V(Min) StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channelTrenchMOSlogiclevelFET 1.1Generaldescription LogiclevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits Low | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOSlogiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP101NQ03LTinSOT78(TO-220AB) PHU101NQ03LTinSOT533(I-PAK) Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-Channel30-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TrenchMOSlogiclevelFET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS™technology. Productavailability: PHP101NQ03LTinSOT78(TO-220AB) PHU101NQ03LTinSOT533(I-PAK) Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips |
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